用于5G应用的22纳米FD-SOI CMOS紧凑型矢量和移相器

P. V. Testa, Lazlo Szilagyi, Zoltan Tibensky, C. Carta, F. Ellinger
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引用次数: 4

摘要

本文提出了一种用于28 GHz 5G应用的矢量和移相器,采用22 nm FD-SOI CMOS技术实现。该元件由四个fpga组成,它们控制片上产生的正交矢量和反相矢量的幅值,结构紧凑。连续的0°-360°相位控制在28 GHz时平均插入损耗为9.5 dB,当功耗PDC为11.5 mW时,最小均方根误差为0.4 dB和4°。所提出的解决方案实现了最小的活动区域,同时显示了与当前技术水平相当的其他功能的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Compact Vector-Sum Phase Shifter for 5G Applications in 22 nm FD-SOI CMOS
This paper presents a vector-sum phase shifter for 5G applications at 28 GHz, implemented in a 22 nm FD-SOI CMOS technology. The component is formed by four VGAs which control the amplitude of quadrature and out-of-phase vectors generated on-chip with compact passive structures. A continuous 0°-360° phase control has been demonstrated with an average insertion loss of 9.5 dB at 28 GHz and a minimum RMS error of 0.4 dB and 4° when the power consumption PDC is 11.5 mW. The presented solution achieves the smallest active area while showing comparable performance for the other features against the state of the art.
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