{"title":"用于5G应用的39GHz GaN前端MMIC","authors":"Bumjin Kim, Vivian Zhi-Qi Li","doi":"10.1109/CSICS.2017.8240473","DOIUrl":null,"url":null,"abstract":"This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"39GHz GaN front end MMIC for 5G applications\",\"authors\":\"Bumjin Kim, Vivian Zhi-Qi Li\",\"doi\":\"10.1109/CSICS.2017.8240473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.
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