{"title":"基于过渡金属氧化物的ReRAM器件开关机制的研究","authors":"R. Jha, B. Long","doi":"10.1109/ISVLSI.2012.53","DOIUrl":null,"url":null,"abstract":"This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 106 cycles and retention up to 105 seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.","PeriodicalId":398850,"journal":{"name":"2012 IEEE Computer Society Annual Symposium on VLSI","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices\",\"authors\":\"R. Jha, B. Long\",\"doi\":\"10.1109/ISVLSI.2012.53\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 106 cycles and retention up to 105 seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.\",\"PeriodicalId\":398850,\"journal\":{\"name\":\"2012 IEEE Computer Society Annual Symposium on VLSI\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Computer Society Annual Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2012.53\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2012.53","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices
This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 106 cycles and retention up to 105 seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.
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