{"title":"单事件瞬态检测的批量内置电流传感器方法","authors":"G. Wirth, C. Fayomi","doi":"10.1109/ISSOC.2007.4427422","DOIUrl":null,"url":null,"abstract":"Radiation effects, particularly single event transients (SETs), are increasingly affecting the reliability of integrated circuits as device dimensions are scaling down. This paper presents the use of bulk built in current sensors (Bulk-BICS) for SET detection. The efficiency and applicability of the bulk-BICS approach for Single Event Transient detection is demonstrated through device and circuit level simulations.","PeriodicalId":244119,"journal":{"name":"2007 International Symposium on System-on-Chip","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"The Bulk Built In Current Sensor Approach for Single Event Transient Detection\",\"authors\":\"G. Wirth, C. Fayomi\",\"doi\":\"10.1109/ISSOC.2007.4427422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Radiation effects, particularly single event transients (SETs), are increasingly affecting the reliability of integrated circuits as device dimensions are scaling down. This paper presents the use of bulk built in current sensors (Bulk-BICS) for SET detection. The efficiency and applicability of the bulk-BICS approach for Single Event Transient detection is demonstrated through device and circuit level simulations.\",\"PeriodicalId\":244119,\"journal\":{\"name\":\"2007 International Symposium on System-on-Chip\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on System-on-Chip\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSOC.2007.4427422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on System-on-Chip","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSOC.2007.4427422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Bulk Built In Current Sensor Approach for Single Event Transient Detection
Radiation effects, particularly single event transients (SETs), are increasingly affecting the reliability of integrated circuits as device dimensions are scaling down. This paper presents the use of bulk built in current sensors (Bulk-BICS) for SET detection. The efficiency and applicability of the bulk-BICS approach for Single Event Transient detection is demonstrated through device and circuit level simulations.