一种克服功率MOSFET TDR测量中信号不稳定性的创新方法

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898150

S. Y. Tan, K. K. Ng, S. Y. Gan, C. Sin

{"title":"一种克服功率MOSFET TDR测量中信号不稳定性的创新方法","authors":"S. Y. Tan, K. K. Ng, S. Y. Gan, C. Sin","doi":"10.1109/IPFA.2014.6898150","DOIUrl":null,"url":null,"abstract":"Hand probing is the most common technique being applied in Time Domain Reflectometry (TDR) measurement. It is a simple and easy method, but it produced instability on overall signal. Therefore, a new test fixture is designed to maximize its reproducibility. Repeatability test will be used to show its effectiveness on Power MOSFET. In addition, with the test fixture, the standard deviation for impedance results was σ=0.12 based on the same part for eight times measurement, compare to σ=3.26 with hand probing. Therefore a significant improvement on the repeatability test was clearly demonstrated.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An innovative method to overcome signal instability during TDR measurement of power MOSFET\",\"authors\":\"S. Y. Tan, K. K. Ng, S. Y. Gan, C. Sin\",\"doi\":\"10.1109/IPFA.2014.6898150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hand probing is the most common technique being applied in Time Domain Reflectometry (TDR) measurement. It is a simple and easy method, but it produced instability on overall signal. Therefore, a new test fixture is designed to maximize its reproducibility. Repeatability test will be used to show its effectiveness on Power MOSFET. In addition, with the test fixture, the standard deviation for impedance results was σ=0.12 based on the same part for eight times measurement, compare to σ=3.26 with hand probing. Therefore a significant improvement on the repeatability test was clearly demonstrated.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

手探测是时域反射测量中最常用的技术。该方法简单易行，但对整体信号产生不稳定性。因此，设计了一种新的测试夹具，以最大限度地提高其再现性。可重复性测试将用于显示其在功率MOSFET上的有效性。此外，使用测试夹具对同一零件进行8次测量，阻抗结果的标准差为σ=0.12，而用手探测的阻抗结果的标准差为σ=3.26。因此，重复性测试的显著改进是显而易见的。

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An innovative method to overcome signal instability during TDR measurement of power MOSFET

Hand probing is the most common technique being applied in Time Domain Reflectometry (TDR) measurement. It is a simple and easy method, but it produced instability on overall signal. Therefore, a new test fixture is designed to maximize its reproducibility. Repeatability test will be used to show its effectiveness on Power MOSFET. In addition, with the test fixture, the standard deviation for impedance results was σ=0.12 based on the same part for eight times measurement, compare to σ=3.26 with hand probing. Therefore a significant improvement on the repeatability test was clearly demonstrated.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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