光暗原位织构PbTe薄膜——多晶薄膜高对比度光存储新技术

L. Rao, A. Selvarajan
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摘要

最近的研究(1,2)表明,纹理薄膜非常适合于光存储,因为它们在激光照射下表现出明显的光学对比度。Craighead等(1)证明,采用溅射刻蚀技术制备相对较厚的各种材料薄膜时,由于柱状塌陷机制,其反射率对比度较好。Kameswara Rao等(2)观察到,斜角度沉积技术制备的Ge薄膜,由于辐照区被化学修饰为选择性氧化相,表现出良好的透射率对比。由此看来,纹理薄膜中光学对比的起源和性质随着制备方法和薄膜厚度的不同而发生重大变化。在本研究中,我们报道了通过使辐照区变暗来观察PbTe多晶薄膜的光学对比度。发现所观察到的变暗与非晶材料中众所周知的光变暗相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photodarkening In insitu Textured PbTe Eilms - A Novel Technique for High Contrast Optical Storage in Polycrystalline Thin Eilms
Recent studies (1,2) have shown that textured films are ideally suited for optical storage as they exhibit appreciable optical contrast upon laser irradiation. Craighead et al (1) demonstrated that relatively thick films of various materials exhibit good reflectance contrast due to a mechanism of columnar collapse, when the films are prepared by sputter-etch technique. Kameswara Rao et al (2) observed that thin films of Ge, prepared by oblique angle deposition technique, exhibit good transmittance contrast due to chemical modification of the irradiated region to a selective oxide phase. It thus appears that the origin as well as the nature of the optical contrast in textured films critically vary with method of preparation as well as the thickness of the film. In the present study we report the observation of optical contrast of thin polycrystalline films of PbTe, via darkening of irradiated region. The observed darkening is found to be similar to the photodarkening widely known in amorphous materials.
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