用于微型计算机的具有块页编程功能的高密度NAND EEPROM

1989 Proceedings of the IEEE Custom Integrated Circuits Conference Pub Date : 1989-05-15 DOI:10.1109/CICC.1989.56726

M. Momodomi, Y. Iwata, Tomoharu Tanaka, Y. Itoh, R. Shirota, F. Masuoka

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引用次数: 6

摘要

一个5v - 4mb的NAND EEPROM(电可擦除可编程只读存储器)已经成功开发。EEPROM具有片上高压发电机，因此系统只需要5v电源。块页擦除/编程模式实现高速编程。片上测试电路提供高可靠性。NAND EEPROM在小型微机系统中有许多应用，这些系统需要低功耗的大型存储系统

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A high density NAND EEPROM with block-page programming for microcomputer applications

A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption

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1989 Proceedings of the IEEE Custom Integrated Circuits Conference

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