2- 20ghz，高增益，单片HEMT分布式放大器

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI:10.1109/MCS.1987.1114527

C. Nishimoto, R. Larue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk

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引用次数: 1

摘要

采用0.3微米门长HEMT器件的低噪声2-20 GHz单片分布式放大器实现了11 dB +- 0.5 dB的增益。这代表了使用单场效应管增益单元的分布式放大器的最高增益。在中频(7-12 GHz)实现了创纪录的3 dB低噪声系数。电路设计采用5个宽度不同的HEMT晶体管，栅极采用电子束光刻技术制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier

A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

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Microwave and Millimeter-Wave Monolithic Circuits

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