一种基于基模修复细胞的基于tsv的三维存储器修复方案

2017 International SoC Design Conference (ISOCC) Pub Date : 2017-11-01 DOI:10.1109/ISOCC.2017.8368804

Donghyun Han, Hayoung Lee, Donghyun Kim, Sungho Kang

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引用次数: 0

摘要

本文提出了一种新的修复方案，该方案由一种新的修复算法和基于TSV的三维存储器的基模结构组成。传统的3D存储器修复过程在每个存储器层中使用额外的细胞。提出了一种利用基模备用单元修复记忆层的冗余单元结构，该结构由解存储器、备用CAM和控制结构组成。实验结果表明，新修复方案的修复率优于模间修复方法。

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A new repair scheme for TSV-based 3D memory using base die repair cells

In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

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2017 International SoC Design Conference (ISOCC)

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