边缘发射体中的蚀刻晶格效应和VCSELs - PBG效应是否存在?

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1264608

J. Rorison

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引用次数: 5

摘要

只提供摘要形式。目前，国内外对PBG结构在vcsel和边缘发射激光器中的刻蚀进行了大量的研究。本文介绍了利用聚焦离子束刻蚀(FIBE)将PBGs结构刻蚀到gaas基质子注入和氧化物约束VCSELs的dbs中的实验结果。本文还介绍了在边缘发射激光器中在脊波导两侧刻蚀一小段PBG晶格的结果。通过这种技术，观察到侧模抑制比提高了40dB。使用时域有限差分模型对其进行建模，以了解这是否确实是PBG效应。

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Etched lattice effects in edge-emitters and VCSELs - PBG effects or not?

Summary form only given. There has been a significant amount of study world-wide on etching PBG structures into both VCSELs and edge-emitting lasers. The results of experiments etching PBGs structures into the DBRs of GaAs-based proton-implanted and oxide confined VCSELs using focussed ion beam etching (FIBE) are presented. The results of etching a small section of a PBG lattice on either side of the ridge waveguide in an edge-emitting laser are also be presented. A side mode suppression ratio improvement of 40dB has been observed through this technique. This has been modelled using a finite difference time domain model to understand if this is indeed a PBG effect.

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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.

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