一个2 v 23 /spl mu/A 5.3 ppm//spl度/C四阶曲率补偿CMOS带隙基准

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012875

K. Leung, P. Mok, Chi Yat Leung

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引用次数: 16

摘要

提出了一种四阶曲率补偿的CMOS带隙基准，该基准采用高阻多晶硅电阻产生温度相关电阻比。所提出的基准可以低至2v电源，并消耗23 /spl mu/ a的最大电源电流。温度系数为5.3 ppm//spl度/C，线路调节为/spl plusmn/1.25 mV/V。改进后的温度系数比传统方法降低了约5倍。

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A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C 4th-order curvature-compensated CMOS bandgap reference

A 4th-order curvature-compensated CMOS bandgap reference, which uses a high-resistive poly resistor to a generate temperature dependent resistor ratio, is proposed. The proposed reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C and a line regulation of /spl plusmn/1.25 mV/V are achieved at 2-V supply. The improvement on temperature coefficient is about 5 times reduction compared to the conventional approach.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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