{"title":"用于生物医学物联网节点的过程-电压-温度不敏感混合压控环振荡器","authors":"M. N. K. Reddy, S. Patri","doi":"10.1109/iSES54909.2022.00104","DOIUrl":null,"url":null,"abstract":"This work presents a PVT insensitive ring oscillator (RO) for IoT applications. A five-stage RO is designed by integrating diverse delay cells having contradictory temperature characteristics, complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) delay cells to reduce the temperature coefficient. In addition, auxiliary circuit is employed to compensate for process and supply variations. The RO implemented with a 180 nm standard CMOS process reliably produces a 6.8 MHz reference frequency with a temperature drift of 0.9 % at the supply voltage of 1.2 V. Also, it operates at a low power dissipation of 362 µW with an compact area of 4080 µm2.","PeriodicalId":438143,"journal":{"name":"2022 IEEE International Symposium on Smart Electronic Systems (iSES)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Process-Voltage-Temperature insensitive hybrid Voltage controlled ring oscillator for Biomedical IoT node\",\"authors\":\"M. N. K. Reddy, S. Patri\",\"doi\":\"10.1109/iSES54909.2022.00104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a PVT insensitive ring oscillator (RO) for IoT applications. A five-stage RO is designed by integrating diverse delay cells having contradictory temperature characteristics, complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) delay cells to reduce the temperature coefficient. In addition, auxiliary circuit is employed to compensate for process and supply variations. The RO implemented with a 180 nm standard CMOS process reliably produces a 6.8 MHz reference frequency with a temperature drift of 0.9 % at the supply voltage of 1.2 V. Also, it operates at a low power dissipation of 362 µW with an compact area of 4080 µm2.\",\"PeriodicalId\":438143,\"journal\":{\"name\":\"2022 IEEE International Symposium on Smart Electronic Systems (iSES)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Symposium on Smart Electronic Systems (iSES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iSES54909.2022.00104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on Smart Electronic Systems (iSES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iSES54909.2022.00104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Process-Voltage-Temperature insensitive hybrid Voltage controlled ring oscillator for Biomedical IoT node
This work presents a PVT insensitive ring oscillator (RO) for IoT applications. A five-stage RO is designed by integrating diverse delay cells having contradictory temperature characteristics, complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) delay cells to reduce the temperature coefficient. In addition, auxiliary circuit is employed to compensate for process and supply variations. The RO implemented with a 180 nm standard CMOS process reliably produces a 6.8 MHz reference frequency with a temperature drift of 0.9 % at the supply voltage of 1.2 V. Also, it operates at a low power dissipation of 362 µW with an compact area of 4080 µm2.