砷化镓太阳能电池:p层厚度对器件参数的影响

2011 International Conference on Nanoscience, Technology and Societal Implications Pub Date : 2011-12-27 DOI:10.1109/NSTSI.2011.6111799

S. Mangal, P. Banerji

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引用次数: 0

摘要

研究了p-n结GaAs二极管的p层厚度、理想因数、串联电阻和势垒高度的依赖关系。测量了太阳光照下太阳能电池的响应，发现效率、填充系数和短路电流随p-GaAs厚度的增加而增加，但在一定厚度之后，这些参数都随厚度的增加而减小。当空气质量为1时，当层厚为3 μ p时，电池效率达到12.7%。

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GaAs Solar Cell: Effect of P-Layer Thickness on Device Parameter

p-layer thickness dependence ideality factor, series resistance and barrier height had been investigated of a p-n junction GaAs diode. Solar cell response under sun light illumination was taken and it was found that efficiency, fill factor and short circuit current increased with the thickness of p-GaAs but after a certain thickness all this parameters decreased with increase in thickness. The efficiency of the cell was reached maximum 12.7% at air mass 1 for a 3 μm p layer thickness.

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2011 International Conference on Nanoscience, Technology and Societal Implications

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