晶片级MOSFET与亚微米光解聚合物临时键合技术，超快速激光烧蚀用于3DIC应用

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480487

Chuan-An Cheng, Yu-Hsiang Huang, Chien-Hung Lin, Chia-Lin Lee, Shan-Chun Yang, Kuan-Neng Chen

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引用次数: 3

摘要

以光解聚合物和聚酰亚胺分别作为释放层和粘接层，实现了亚微米光解聚合物的临时键合和不到20s的超快速激光脱键工艺。此外，粘合结构为处理过程提供了高耐化学性和机械强度。通过测量器件在脱粘前后的电气特性，显示出良好的性能而不降低。因此，它可以成为三维集成中临时键合和脱键的潜在候选材料。

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Wafer-level MOSFET with submicron photolysis polymer temporary bonding technology using ultra-fast laser ablation for 3DIC application

A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.

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来源期刊

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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