采用可拆卸封装衬垫改善48nm TANOS NAND电池性能

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090595

M. F. Beug, T. Melde, J. Paul, U. Bewersdorff-Sarlette, M. Czernohorsky, V. Beyer, R. Hoffmann, K. Seidel, D. Lohr, L. Bach, R. Knoefler, A. Tilke

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引用次数: 2

摘要

本文提出了在字线(WL)侧壁集成牺牲衬垫的电荷捕获(CT)电池，该电池显著改善了当前CT存储器件的主要问题——擦除和保留特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner

This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices.

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2009 IEEE International Memory Workshop

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