10 nmf垂直各向异性CoFeB-MgO磁隧道结，硼扩散控制具有超过400°C的高耐热性

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223661

H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

{"title":"10 nmf垂直各向异性CoFeB-MgO磁隧道结，硼扩散控制具有超过400°C的高耐热性","authors":"H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh","doi":"10.1109/VLSIT.2015.7223661","DOIUrl":null,"url":null,"abstract":"We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control\",\"authors\":\"H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh\",\"doi\":\"10.1109/VLSIT.2015.7223661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 30

摘要

我们开发了一种垂直各向异性磁隧道结(p-MTJ)堆栈，其中有CoFeB自由层和Co/Pt多层合成铁磁(SyF)钉住层，通过控制硼扩散可以承受高达420°C的退火温度(与CMOS BEOL工艺兼容)。我们展示了具有双CoFeB/MgO界面的10 nmφ p-MTJ，可承受400°C退火，这是实现高密度自旋传递扭矩磁性随机存取存储器(STT-MRAM)降维的必要组成部分。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 Symposium on VLSI Technology (VLSI Technology)

自引率

0.00%

发文量