采用90纳米制程技术的S-SIM应用的NOR和NAND嵌入式混合闪存

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090582

Jeong-Uk Han, Yong Kyu Lee, Changmin Jeon, Jido Ryu, Eunmi Hong, Seungjin Yang, Youngho Kim, Hyucksoo Yang, Hyun-Khe Yoo, Jaemin Yu, Hoonjin Bang, Seung-Woon Lee, B. Lee, Daesop Lee, E. Jung, C. Chung

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引用次数: 1

摘要

我们首次展示了一种混合闪存，包括在一个芯片上使用90纳米逻辑技术的NOR和NAND单元，用于S-SIM(超级用户身份模块)应用。内存大小分别为16mb NAND和768kb NOR flash。在智能卡的成功应用中，闪存细胞表现出超过10 k周期的耐久性和10年的保留率。

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Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology

We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application.

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2009 IEEE International Memory Workshop

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