同步DRAM产品革新了存储系统设计

A. Cosoroaba
{"title":"同步DRAM产品革新了存储系统设计","authors":"A. Cosoroaba","doi":"10.1109/SOUTHC.1995.516079","DOIUrl":null,"url":null,"abstract":"Main memory devices, DRAMs, have traditionally quadrupled in size from one generation to the next with limited speed improvements. High speed SRAM caches have usually filled the bandwidth gap between MPU and DRAMs. Designers have recently realized that with the increased software complexity and MPU speed requirements, SRAM caches alone might not be able to provide the ultimate Performance/Cost solution. A new synchronous I/O structure has recently been developed for DRAMs (under the auspices of the joint electronic device engineering council, JEDEC) and set as the new standard for high performance devices called synchronous DRAMs.","PeriodicalId":341055,"journal":{"name":"Proceedings of Southcon '95","volume":"5 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synchronous DRAM products evolutionize memory system design\",\"authors\":\"A. Cosoroaba\",\"doi\":\"10.1109/SOUTHC.1995.516079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Main memory devices, DRAMs, have traditionally quadrupled in size from one generation to the next with limited speed improvements. High speed SRAM caches have usually filled the bandwidth gap between MPU and DRAMs. Designers have recently realized that with the increased software complexity and MPU speed requirements, SRAM caches alone might not be able to provide the ultimate Performance/Cost solution. A new synchronous I/O structure has recently been developed for DRAMs (under the auspices of the joint electronic device engineering council, JEDEC) and set as the new standard for high performance devices called synchronous DRAMs.\",\"PeriodicalId\":341055,\"journal\":{\"name\":\"Proceedings of Southcon '95\",\"volume\":\"5 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Southcon '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1995.516079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Southcon '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1995.516079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

传统上,从一代到下一代,主存储设备(dram)的尺寸会增加四倍,但速度提升有限。高速SRAM缓存通常填补了MPU和dram之间的带宽差距。设计人员最近意识到,随着软件复杂性和MPU速度要求的增加,单独的SRAM缓存可能无法提供最终的性能/成本解决方案。最近为dram开发了一种新的同步I/O结构(在联合电子设备工程委员会JEDEC的主持下),并将其作为高性能器件同步dram的新标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synchronous DRAM products evolutionize memory system design
Main memory devices, DRAMs, have traditionally quadrupled in size from one generation to the next with limited speed improvements. High speed SRAM caches have usually filled the bandwidth gap between MPU and DRAMs. Designers have recently realized that with the increased software complexity and MPU speed requirements, SRAM caches alone might not be able to provide the ultimate Performance/Cost solution. A new synchronous I/O structure has recently been developed for DRAMs (under the auspices of the joint electronic device engineering council, JEDEC) and set as the new standard for high performance devices called synchronous DRAMs.
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