G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker
{"title":"用CCl/sub - 4/掺杂源生长半绝缘InP","authors":"G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker","doi":"10.1109/SIM.1996.570863","DOIUrl":null,"url":null,"abstract":"Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"6 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semi-insulating InP grown with a CCl/sub 4/ doping source\",\"authors\":\"G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker\",\"doi\":\"10.1109/SIM.1996.570863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"6 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semi-insulating InP grown with a CCl/sub 4/ doping source
Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.
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