P1dB > 0dBm的45nm CMOS全平衡低噪声跨导放大器

H. M. Geddada, J. Silva-Martínez, S. Taylor
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引用次数: 6

摘要

本文介绍了两种线性宽带无电感低噪声跨导放大器(LNTA),对大信号(P1dB)和小信号(IIP3)具有高线性度。LNTAs利用NMOS和PMOS晶体管的互补特性来提高线性度。第一个原型是完全平衡电流复用LNTA,带宽为0.12GHz,最小NF为3dB, IIP3为10.8dBm, P1dB为0dBm,功耗为35mW。第二个原型提出了一个低功耗的批量驱动LNTA,功耗为20mW,实现了相当的性能。每个LNTA在45nm CMOS中占用0.06mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully balanced low-noise transconductance amplifiers with P1dB > 0dBm in 45nm CMOS
This paper presents two linear broadband inductorless Low Noise Transconductance Amplifiers (LNTA) featuring high linearities for large signal (P1dB) and small signal (IIP3). The LNTAs utilize the complementary characteristics of NMOS and PMOS transistors to enhance the linearity. First prototype is a fully balanced current reuse LNTA achieving 0.12GHz bandwidth, minimum NF of 3dB, IIP3 of 10.8dBm and P1dB of 0dBm while dissipating 35mW. Second prototype proposes a low power bulk driven LNTA with 20mW of power consumption achieving comparable performances. Each LNTA occupy 0.06mm2 in 45nm CMOS.
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