C. Palade, A. Slav, A. Lepadatu, A. Maraloiu, V. Teodorescu, M. Ciurea
{"title":"具有记忆效应的嵌入锗纳米晶HfO2","authors":"C. Palade, A. Slav, A. Lepadatu, A. Maraloiu, V. Teodorescu, M. Ciurea","doi":"10.1109/SMICND.2015.7355155","DOIUrl":null,"url":null,"abstract":"The charge storage properties of Ge nanocrystals-based MOS-like capacitors with tunnel and gate HfO<sub>2</sub> are studied. HfO<sub>2</sub>/Ge/HfO<sub>2</sub>/Si trilayer structures were prepared by magnetron sputtering (in Ar) and subsequent rapid thermal annealing (650 °C). HfO<sub>2</sub>/Si structures were also prepared, some under similar conditions, while others were deposited in Ar:O<sub>2</sub>. TEM investigations and C-V measurements were performed. TEM on annealed trilayers evidences the formation of ordered and precisely positioned array of Ge nanocrystals embedded in crystalline HfO<sub>2</sub>. The annealed Al/HfO<sub>2</sub>/Ge/HfO<sub>2</sub>/p-Si/Al capacitors present counterclockwise C-V hysteresis (0.8 V memory window) mainly given by Ge nanocrystals, with negligible contribution from crystallized-HfO<sub>2</sub> traps.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"13 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"HfO2 with embedded Ge nanocrystals with memory effects\",\"authors\":\"C. Palade, A. Slav, A. Lepadatu, A. Maraloiu, V. Teodorescu, M. Ciurea\",\"doi\":\"10.1109/SMICND.2015.7355155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The charge storage properties of Ge nanocrystals-based MOS-like capacitors with tunnel and gate HfO<sub>2</sub> are studied. HfO<sub>2</sub>/Ge/HfO<sub>2</sub>/Si trilayer structures were prepared by magnetron sputtering (in Ar) and subsequent rapid thermal annealing (650 °C). HfO<sub>2</sub>/Si structures were also prepared, some under similar conditions, while others were deposited in Ar:O<sub>2</sub>. TEM investigations and C-V measurements were performed. TEM on annealed trilayers evidences the formation of ordered and precisely positioned array of Ge nanocrystals embedded in crystalline HfO<sub>2</sub>. The annealed Al/HfO<sub>2</sub>/Ge/HfO<sub>2</sub>/p-Si/Al capacitors present counterclockwise C-V hysteresis (0.8 V memory window) mainly given by Ge nanocrystals, with negligible contribution from crystallized-HfO<sub>2</sub> traps.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"13 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
HfO2 with embedded Ge nanocrystals with memory effects
The charge storage properties of Ge nanocrystals-based MOS-like capacitors with tunnel and gate HfO2 are studied. HfO2/Ge/HfO2/Si trilayer structures were prepared by magnetron sputtering (in Ar) and subsequent rapid thermal annealing (650 °C). HfO2/Si structures were also prepared, some under similar conditions, while others were deposited in Ar:O2. TEM investigations and C-V measurements were performed. TEM on annealed trilayers evidences the formation of ordered and precisely positioned array of Ge nanocrystals embedded in crystalline HfO2. The annealed Al/HfO2/Ge/HfO2/p-Si/Al capacitors present counterclockwise C-V hysteresis (0.8 V memory window) mainly given by Ge nanocrystals, with negligible contribution from crystallized-HfO2 traps.
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