Thierry Devoivre, M. Lunenborg, C. Julien, J. Carrere, P. Ferreira, W. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P. Goirand, R. Palla, I. Thomas, F. Guyader, D. Roy, B. Borot, N. Planes, S. Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond
{"title":"经过验证的90nm CMOS技术平台，具有低k铜互连，适用于先进的片上系统(SoC)","authors":"Thierry Devoivre, M. Lunenborg, C. Julien, J. Carrere, P. Ferreira, W. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P. Goirand, R. Palla, I. Thomas, F. Guyader, D. Roy, B. Borot, N. Planes, S. Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond","doi":"10.1109/MTDT.2002.1029778","DOIUrl":null,"url":null,"abstract":"This paper presents a complete 90nm CMOS technology platform dedicated to advanced SoC manufacturing, featuring 16/spl Aring/ EOT-70nm transistors (standard process) or 21/spl Aring/-90nm transistors (Low Power process) as well as 2.5 or 3.3V I/O transistors, copper interconnects and SiOC low-k IMD (k=2.9). The main critical process steps are described and electrical results are discussed. Moreover, using advanced lithographic tools, fully functional 1 Mbit SRAM instances, based on a highly manufacturable 6T 1.36/spl mu/m/sup 2/ memory cell, have been processed. The cell is detailed and its features, both electrical and morphological, are discussed.","PeriodicalId":230758,"journal":{"name":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)\",\"authors\":\"Thierry Devoivre, M. Lunenborg, C. Julien, J. Carrere, P. Ferreira, W. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P. Goirand, R. Palla, I. Thomas, F. Guyader, D. Roy, B. Borot, N. Planes, S. Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond\",\"doi\":\"10.1109/MTDT.2002.1029778\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a complete 90nm CMOS technology platform dedicated to advanced SoC manufacturing, featuring 16/spl Aring/ EOT-70nm transistors (standard process) or 21/spl Aring/-90nm transistors (Low Power process) as well as 2.5 or 3.3V I/O transistors, copper interconnects and SiOC low-k IMD (k=2.9). The main critical process steps are described and electrical results are discussed. Moreover, using advanced lithographic tools, fully functional 1 Mbit SRAM instances, based on a highly manufacturable 6T 1.36/spl mu/m/sup 2/ memory cell, have been processed. The cell is detailed and its features, both electrical and morphological, are discussed.\",\"PeriodicalId\":230758,\"journal\":{\"name\":\"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2002.1029778\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2002.1029778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)
This paper presents a complete 90nm CMOS technology platform dedicated to advanced SoC manufacturing, featuring 16/spl Aring/ EOT-70nm transistors (standard process) or 21/spl Aring/-90nm transistors (Low Power process) as well as 2.5 or 3.3V I/O transistors, copper interconnects and SiOC low-k IMD (k=2.9). The main critical process steps are described and electrical results are discussed. Moreover, using advanced lithographic tools, fully functional 1 Mbit SRAM instances, based on a highly manufacturable 6T 1.36/spl mu/m/sup 2/ memory cell, have been processed. The cell is detailed and its features, both electrical and morphological, are discussed.
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