基于55nm CMOS的12b 200MS/s频率可扩展过零流水线ADC

Soon-Kyun Shin, J. Rudell, D. Daly, C. Muñoz, D. Chang, K. Gulati, Hae-Seung Lee, M. Straayer
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引用次数: 11

摘要

提出了一种基于12位200MS/s过零的流水线ADC。为了获得更高的精度,采用了粗相后接电平移的细相。为了实现高频操作,子adc闪光比较器在粗相后立即进行频闪。ADC在55nm CMOS中占地0.276mm2,功耗28.5mW。在131fJ/step的FOM下,在200MS/s的99.6MHz输入信号下实现了62.5dB SNDR和78.6dBc SFDR。参考缓冲器、偏置电路和数字纠错电路均在芯片上实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12b 200MS/s frequency scalable zero-crossing based pipelined ADC in 55nm CMOS
A 12-bit 200MS/s zero-crossing based pipeline ADC is presented. A coarse phase followed by a level-shifted fine phase is employed for higher accuracy. To enable high frequency operation, sub-ADC flash comparators are strobed immediately after the coarse phase. The ADC occupies 0.276mm2 in 55nm CMOS and dissipates 28.5mW. 62.5dB SNDR and 78.6dBc SFDR with a 99.6MHz input signal at 200MS/s are achieved for a FOM of 131fJ/step. The reference buffer, bias circuitry, and digital error correction circuits are all implemented on chip.
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