{"title":"从准静态到瞬态系统级ESD仿真:导通元件的提取","authors":"F. Escudié, F. Caignet, N. Nolhier, M. Bafleur","doi":"10.1109/EOSESD.2016.7592563","DOIUrl":null,"url":null,"abstract":"Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.","PeriodicalId":239756,"journal":{"name":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"From quasi-static to transient system level ESD simulation: Extraction of turn-on elements\",\"authors\":\"F. Escudié, F. Caignet, N. Nolhier, M. Bafleur\",\"doi\":\"10.1109/EOSESD.2016.7592563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.\",\"PeriodicalId\":239756,\"journal\":{\"name\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2016.7592563\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2016.7592563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
From quasi-static to transient system level ESD simulation: Extraction of turn-on elements
Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.
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