40MHz 308Kb CCD视频存储器

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156569

H. Veendrick, L. Pfennings, M. Annegarn, H. Harwig, M. Pelgrom, H. Peuscher, J. Raven, A. Slob, J. Slotboom

{"title":"40MHz 308Kb CCD视频存储器","authors":"H. Veendrick, L. Pfennings, M. Annegarn, H. Harwig, M. Pelgrom, H. Peuscher, J. Raven, A. Slob, J. Slotboom","doi":"10.1109/ISSCC.1984.1156569","DOIUrl":null,"url":null,"abstract":"This report will describe a 34.8mm2serial digital field store chip dissipating 350mW and fabricated in a 2μm NMOS modified with one extra mask. Programmable I/O control and 20ms refresh time provide application flexibility.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 40MHz 308Kb CCD video memory\",\"authors\":\"H. Veendrick, L. Pfennings, M. Annegarn, H. Harwig, M. Pelgrom, H. Peuscher, J. Raven, A. Slob, J. Slotboom\",\"doi\":\"10.1109/ISSCC.1984.1156569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This report will describe a 34.8mm2serial digital field store chip dissipating 350mW and fabricated in a 2μm NMOS modified with one extra mask. Programmable I/O control and 20ms refresh time provide application flexibility.\",\"PeriodicalId\":260117,\"journal\":{\"name\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"121 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1984.1156569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本报告将描述一个34.8mm2的串行数字现场存储芯片，功耗350mW，并在2μm的NMOS中制作，并添加一个额外的掩模。可编程I/O控制和20ms刷新时间提供应用灵活性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 40MHz 308Kb CCD video memory

This report will describe a 34.8mm2serial digital field store chip dissipating 350mW and fabricated in a 2μm NMOS modified with one extra mask. Programmable I/O control and 20ms refresh time provide application flexibility.

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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