U. Zschieschang, N. H. Hansen, J. Pflaum, Tatsuya Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, H. Klauk
{"title":"高迁移率有机薄膜晶体管与光刻图像化顶部触点","authors":"U. Zschieschang, N. H. Hansen, J. Pflaum, Tatsuya Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, H. Klauk","doi":"10.1109/DRC.2011.5994449","DOIUrl":null,"url":null,"abstract":"Due to its large-area capability and high resolution, photolithography is the preferred patterning method for pentacene thin-film transistors (TFTs) for display and circuit applications [1,2]. Since the morphology of thin pentacene films is very sensitive to solvents and heat [3,4], the photolithographic patterning of the source/drain contacts is ideally performed prior to the pentacene deposition, which explains the general preference for the bottom-contact (coplanar) TFT structure. However, as experiments [5] and simulations [6,7] have shown, the bottom-contact TFT structure is associated with substantially larger contact resistance than the top-contact (staggered) structure, which means that for the same channel length, top-contact TFTs are expected to provide larger transconductance and higher cutoff frequency than bottom-contact TFTs. Here we report on organic TFTs with Au top contacts patterned by ordinary photolithography and wet etching (using common solvents, photoresists, and etchants) having field-effect mobilities (0.4 cm2/Vs) and on/off current ratios (107) similar to those of optimized bottom-contact pentacene TFTs [1,2,5].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-mobility organic thin-film transistors with photolithographically patterned top contacts\",\"authors\":\"U. Zschieschang, N. H. Hansen, J. Pflaum, Tatsuya Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, H. Klauk\",\"doi\":\"10.1109/DRC.2011.5994449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to its large-area capability and high resolution, photolithography is the preferred patterning method for pentacene thin-film transistors (TFTs) for display and circuit applications [1,2]. Since the morphology of thin pentacene films is very sensitive to solvents and heat [3,4], the photolithographic patterning of the source/drain contacts is ideally performed prior to the pentacene deposition, which explains the general preference for the bottom-contact (coplanar) TFT structure. However, as experiments [5] and simulations [6,7] have shown, the bottom-contact TFT structure is associated with substantially larger contact resistance than the top-contact (staggered) structure, which means that for the same channel length, top-contact TFTs are expected to provide larger transconductance and higher cutoff frequency than bottom-contact TFTs. Here we report on organic TFTs with Au top contacts patterned by ordinary photolithography and wet etching (using common solvents, photoresists, and etchants) having field-effect mobilities (0.4 cm2/Vs) and on/off current ratios (107) similar to those of optimized bottom-contact pentacene TFTs [1,2,5].\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994449\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-mobility organic thin-film transistors with photolithographically patterned top contacts
Due to its large-area capability and high resolution, photolithography is the preferred patterning method for pentacene thin-film transistors (TFTs) for display and circuit applications [1,2]. Since the morphology of thin pentacene films is very sensitive to solvents and heat [3,4], the photolithographic patterning of the source/drain contacts is ideally performed prior to the pentacene deposition, which explains the general preference for the bottom-contact (coplanar) TFT structure. However, as experiments [5] and simulations [6,7] have shown, the bottom-contact TFT structure is associated with substantially larger contact resistance than the top-contact (staggered) structure, which means that for the same channel length, top-contact TFTs are expected to provide larger transconductance and higher cutoff frequency than bottom-contact TFTs. Here we report on organic TFTs with Au top contacts patterned by ordinary photolithography and wet etching (using common solvents, photoresists, and etchants) having field-effect mobilities (0.4 cm2/Vs) and on/off current ratios (107) similar to those of optimized bottom-contact pentacene TFTs [1,2,5].