高迁移率Ge FinFET pMOS器件的自热特性

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223703

E. Bury, B. Kaczer, J. Mitard, N. Collaert, N. S. Khatami, Z. Akšamija, D. Vasileska, K. Raleva, L. Witters, G. Hellings, D. Linten, G. Groeseneken, A. Thean

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引用次数: 29

摘要

基于物理扩展的方法，测量和模拟表明，与标准Si finfet相比，实现高迁移率材料，特别是合金，例如用于增强Ge通道迁移率的SiGe缓冲器，可以导致N7节点的自加热增加115%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of self-heating in high-mobility Ge FinFET pMOS devices

Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

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2015 Symposium on VLSI Technology (VLSI Technology)

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