{"title":"短通道非晶ingazno薄膜晶体管参数提取方法的综合研究","authors":"C. Tanaka, K. Ikeda","doi":"10.1109/ICMTS.2018.8383756","DOIUrl":null,"url":null,"abstract":"We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistors\",\"authors\":\"C. Tanaka, K. Ikeda\",\"doi\":\"10.1109/ICMTS.2018.8383756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"178 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383756\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistors
We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.
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