垂直自有序纳米氮化硼薄膜的各向异性热导率及其在电子学中的热热点缓解

S. H. Tsang, Olivier Cometto, M. K. Samani, Shuangxi Sun, Johan Liu, Edwin Hang Tong Teo
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引用次数: 0

摘要

热串扰已成为现代电子学中的一个突出问题。在这里,我们提出了一种新型的垂直有序氮化硼(voBN)薄膜来解决这种限制。voBN具有高的各向异性导热系数,其通过面和面内导热系数相差16倍,可在室温下沉积。采用3\omega方法对其热性能进行了研究,并通过COMSOL Multiphysics仿真进行了验证。这种特性将使热点密度增加295%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Anisotropic thermal conductivity of vertically self-ordered Nanocrystalline Boron Nitride thin films for thermal hotspot mitigation in electronics
Thermal-crosstalk has become a prominent issue in modern electronic. Here, we present a new type of vertically-ordered Boron Nitride (voBN) thin films to address such limitation. voBN has a high anisotropic thermal conductivity with 16 times difference between through-plane and in-plane and can be deposited in room temperature. We studied the thermal properties with 3\omega method and verified with COMSOL Multiphysics simulations. Such characteristic would allow hotspot density to increase by 295%.
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