CAD optimization of hetero-FET structures for efficient operation at millimeter-wave frequencies

A computationally efficient self-consistent model for characterizing the operation and optimizing the structure of heterostructure field effect transistors (hetero-FETs) is introduced. Using this model one can accurately determine quantization effects inside devices which have complicated structures and different compound materials. The model will be applied to show how the layer structure of different Hetero-FETs can be optimized in order to improve their performance at high frequencies of operation.