集成在硅衬底上用于光纤链路的SiGe引脚光电探测器

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-02-09 DOI:10.1109/ISSCC.2003.1234341

G. Wohl, C. Parry, Erich Kasper, M. Jutzi, Manfred Berroth

{"title":"集成在硅衬底上用于光纤链路的SiGe引脚光电探测器","authors":"G. Wohl, C. Parry, Erich Kasper, M. Jutzi, Manfred Berroth","doi":"10.1109/ISSCC.2003.1234341","DOIUrl":null,"url":null,"abstract":"100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.","PeriodicalId":171288,"journal":{"name":"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"SiGe pin-photodetectors integrated on silicon substrates for optical fiber links\",\"authors\":\"G. Wohl, C. Parry, Erich Kasper, M. Jutzi, Manfred Berroth\",\"doi\":\"10.1109/ISSCC.2003.1234341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.\",\"PeriodicalId\":171288,\"journal\":{\"name\":\"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-02-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2003.1234341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2003.1234341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了在SiGe应变松弛缓冲层(SRB)上生长的100% Ge针型光电探测器，对于集成探测器来说，SRB层的生长以及随后的SiGe光电二极管技术处理必须与标准CMOS技术兼容。在1.3 /spl mu/m时可达到145 mA/W的直流光响应度，在1.55 /spl mu/m时可达到25 mA/W。在第一次实验中，100% Ge引脚光电探测器显示出RC限制的3 db光电带宽为0.9 GHz。

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SiGe pin-photodetectors integrated on silicon substrates for optical fiber links

100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.

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2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

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