机械应力下交流热载子效应(MOSFET)

1992 Symposium on VLSI Technology Digest of Technical Papers Pub Date : 1992-06-02 DOI:10.1109/VLSIT.1992.200667

A. Hamada, E. Takeda

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引用次数: 6

摘要

讨论了在单轴机械应力下观察到的交流热载子效应。这种效应是由于压缩机械应力引起的圈闭水平降低。在通道热电子注入中，陷阱能级的降低导致电子脱陷和表面态生成的减少，这在直流应力中没有观察到。这些结果对纳米级器件设计具有重要意义。

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AC hot-carrier effect under mechanical stress (MOSFET)

An AC hot-carrier effect observed under uniaxial mechanical stress is discussed. The effect is due to trap level lowering induced by compressive mechanical stress. In channel hot electron injection, the trap level lowering results in an electron detrapping and a reduction of surface state generation which is not observed for DC stress. These results are significant for nanoscale device design.<>

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1992 Symposium on VLSI Technology Digest of Technical Papers

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