{"title":"超高速ram的竞争技术及其应用","authors":"F. Lee","doi":"10.1109/ISSCC.1986.1156934","DOIUrl":null,"url":null,"abstract":"Advanced MOS and bipolar technologies, using1-2μm lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user's point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"50 3-4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Competing technologies for ultrahigh-speed SRAMs and their applications\",\"authors\":\"F. Lee\",\"doi\":\"10.1109/ISSCC.1986.1156934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced MOS and bipolar technologies, using1-2μm lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user's point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.\",\"PeriodicalId\":440688,\"journal\":{\"name\":\"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"50 3-4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1986.1156934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1986.1156934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Competing technologies for ultrahigh-speed SRAMs and their applications
Advanced MOS and bipolar technologies, using1-2μm lithography, have increased dramatically the complexity of 16K to 256K SRAMs and reduced access time to 3 to 30ns, respectively. Meanwhile, GaAs technology has produced 1 to 3ns, and 1K to 4K SRAMs. The present status and the future projections of these competing technologies will be discussed. The user's point-of-view assessing implementation of high speed SRAMS in a system environment will be offered.
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