改进SiGe HBT结构以减少寄生屏障的影响

2010 Second Pacific-Asia Conference on Circuits, Communications and System Pub Date : 2010-11-11 DOI:10.1109/PACCS.2010.5627013

E. Abiri, M. Salehi, M. Shahraki, Zahra Mehrjoo

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引用次数: 0

摘要

研究了一种n-p-n SiGe异质结双极晶体管(HBT)。该晶体管的发射极和集电极由硅材料构成，锗掺杂剂在基极区线性扩散。锗掺杂剂的加入使晶体管基极-发射极结产生寄生势垒。这种结构降低了屏障效应。在该模型中，选择合适的掺杂剂结构可以提高集电极电流密度

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Reformation of an SiGe HBT structure for reducing the effect of parasitic barriers

In this paper, an n-p-n SiGe heterojunction bipolar transistor (HBT) is investigated. The emitter and collector of this transistor are made up of silicon, and germanium dopant is linearly diffused in the base region. Adding germanium dopant causes the formation of parasitic barriers in base-emitter junction of transistor. The barrier effects are reduced by this structure. In this model, choosing the proper dopant structure, the collector current density can be increased

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2010 Second Pacific-Asia Conference on Circuits, Communications and System

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