一种4w k波段40% PAE三级MMIC功率放大器

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550981

M. Duffy, G. Lasser, M. Roberg, Z. Popovic

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引用次数: 2

摘要

本文介绍了一种峰值输出功率大于4w、峰值功率附加效率(PAE)在40 - 45%之间的三级k波段MMIC功率放大器的设计和实测连续波性能。在18 ~ 24 GHz频率范围内，输出功率超过3.2 W，变化小于1.5 dB。MMIC采用Qorvo的150纳米GaN on SiC工艺实现。三级架构可在18.5-24 GHz范围内实现大于20dB的饱和增益。

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A 4-W K-Band 40% PAE Three-Stage MMIC Power Amplifier

This paper presents the design and measured continuous wave (CW) performance of a three-stage K-band MMIC power amplifier with greater than 4 W peak output power and a peak power added efficiency (PAE) ranging from 40–45 %. The output power exceeds 3.2 W over the frequency range of 18 to 24 GHz with less than 1.5 dB variation. The MMIC is implemented in Qorvo's 150-nm GaN on SiC process. The three stage architecture enables greater than 20dB of saturated gain from 18.5-24 GHz.

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来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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