外加电场作用下CdTe/CdZnTe多量子阱的皮秒全光调制

R. Grac, M. Pugnet, N. Magnea, J. Pautrat
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引用次数: 0

摘要

提出了20ps激光脉冲单次传输实验。在CdTe/Cd/sub 0.62/Zn/sub 0.38/Te多量子阱上施加10/sup 5/ V/cm的静电场,光透射率增加。在804nm波长处,增强系数等于1.6。当脉冲强度高于0.7 fJ /spl mu/m/sup -2/时,外加电场发生屏蔽,恢复零场传输。这些实验表明,屏蔽上升时间小于10ps,这是由于量子阱中空穴的弱约束造成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Picosecond all-optical modulation in CdTe/CdZnTe multi-quantum wells under an applied electric field
We present single shot transmission experiments with 20 ps laser pulses. When a 10/sup 5/ V/cm static electric field is applied on a CdTe/Cd/sub 0.62/Zn/sub 0.38/Te multiple quantum well, the optical transmission increases. At a 804 nm wavelength the enhancement factor is equal to 1.6. For a pulse intensity higher than 0.7 fJ /spl mu/m/sup -2/, screening of the applied electric field occurs, restoring a zero-field transmission. These experiments imply that the screening rise time is shorter than 10 ps which results from weak confinement of the holes within the quantum wells.
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