基于双层雪崩自旋二极管逻辑的时序电路设计

Vaibhav Vyas, J. Friedman
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引用次数: 1

摘要

新的计算范式,如完全可级联的InSb双层雪崩自旋二极管逻辑(BASDL),能够执行复杂的逻辑运算。虽然原著对器件结构、基本逻辑集和基本组合电路进行了全面的说明,但缺乏顺序电路设计的内容。本文利用BASDL对SR型和d型锁存器的结构设计进行了演示,解决了这一空白。提出了新的锁存拓扑,在保持传统锁存功能的同时充分利用基于basdl的逻辑集。通过完整的逻辑级分析和对其物理实现的简要洞察,验证了这些锁存器的有效操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sequential Circuit Design with Bilayer Avalanche Spin Diode Logic
Novel computing paradigms like the fully cascadable InSb bilayer avalanche spin-diode logic (BASDL) are capable of performing complex logic operations. Although the original work provides a comprehensive explanation for the device structure, the fundamental logic set and basic combinational circuits, it lacks the inclusion of sequential circuit design. This paper addresses the void by demonstrating the structural design of SR and D-type latches with BASDL. Novel latch topologies are proposed that take full advantage of the BASDL-based logic set while maintaining conventional latch functionality. The effective operation of these latches is verified through a complete logic-level analysis and a brief insight into their physical implementation.
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