P. Garcia, B. Pellat, J. Blanc, P. Persechini, V. Knopik, L. Baud, F. Goussin, D. Thevenet, S. Majcherczak, F. Reaute, O. Richard, P. Conti, B. Szelag, D. Belot
{"title":"全集成WCDMA直接转换SiGeC BiCMOS接收机","authors":"P. Garcia, B. Pellat, J. Blanc, P. Persechini, V. Knopik, L. Baud, F. Goussin, D. Thevenet, S. Majcherczak, F. Reaute, O. Richard, P. Conti, B. Szelag, D. Belot","doi":"10.1109/BIPOL.2004.1365759","DOIUrl":null,"url":null,"abstract":"This paper describes a WCDMA direct conversion receiver which has been integrated in a BiCMOS SiGe-carbon process featuring 0.25 /spl mu/m/f/sub T/=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5/sup th/ order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fully-integrated WCDMA direct conversion SiGeC BiCMOS receiver\",\"authors\":\"P. Garcia, B. Pellat, J. Blanc, P. Persechini, V. Knopik, L. Baud, F. Goussin, D. Thevenet, S. Majcherczak, F. Reaute, O. Richard, P. Conti, B. Szelag, D. Belot\",\"doi\":\"10.1109/BIPOL.2004.1365759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a WCDMA direct conversion receiver which has been integrated in a BiCMOS SiGe-carbon process featuring 0.25 /spl mu/m/f/sub T/=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5/sup th/ order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fully-integrated WCDMA direct conversion SiGeC BiCMOS receiver
This paper describes a WCDMA direct conversion receiver which has been integrated in a BiCMOS SiGe-carbon process featuring 0.25 /spl mu/m/f/sub T/=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5/sup th/ order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.
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