作为功率放大器的GaAs/InGaAs/InGaP集电极HBTs封装性能

H. Tseng, W. Chu
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引用次数: 1

摘要

GaAs/InGaAs/InGaP集电极上异质结双极晶体管(HBTs)具有有效的散热封装(TDP)结构。采用tdp实现的多指集热器HBT具有梯度InGaAs基,具有令人信服的高速和散热性能。不同寻常的是,TDP对p-n-p器件的影响比对n-n-p器件的影响更大。结果表明,热阻大幅降低50%,功率增加效率(PAE)超过56%。我们的设计可以大大提高下一代手机微型功率放大器的热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Packaging performance of GaAs/InGaAs/InGaP collector-up HBTs as power amplifiers
GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.
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