{"title":"作为功率放大器的GaAs/InGaAs/InGaP集电极HBTs封装性能","authors":"H. Tseng, W. Chu","doi":"10.1109/ACQED.2012.6320520","DOIUrl":null,"url":null,"abstract":"GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"87 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Packaging performance of GaAs/InGaAs/InGaP collector-up HBTs as power amplifiers\",\"authors\":\"H. Tseng, W. Chu\",\"doi\":\"10.1109/ACQED.2012.6320520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.\",\"PeriodicalId\":161858,\"journal\":{\"name\":\"2012 4th Asia Symposium on Quality Electronic Design (ASQED)\",\"volume\":\"87 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 4th Asia Symposium on Quality Electronic Design (ASQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACQED.2012.6320520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACQED.2012.6320520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Packaging performance of GaAs/InGaAs/InGaP collector-up HBTs as power amplifiers
GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors (HBTs), with an effective thermal-dissipation packaging (TDP) configuration, have been developed. The TDP-implemented multi-finger collector-up HBT with a graded InGaAs base is demonstrated to achieve compelling high-speed and heat-removing performances. Extraordinarily, the TDP has a stronger influence on the p-n-p device than on the n-n-p device. The results show that the thermal resistance has been substantially decreased by 50%, and a power-added efficiency (PAE) more than 56% is obtained. Thermal performance for miniature power amplifiers in next-generation cellular phones can be greatly improved from our design.