S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer
{"title":"一种改进的可扩展自洽迭代SiGe HBTs热阻模型","authors":"S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer","doi":"10.1109/BCTM.2016.7738953","DOIUrl":null,"url":null,"abstract":"In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs\",\"authors\":\"S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer\",\"doi\":\"10.1109/BCTM.2016.7738953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.\",\"PeriodicalId\":431327,\"journal\":{\"name\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2016.7738953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs
In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The proposed model evaluates both the upward and downward heat dissipation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.