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引用次数: 4
摘要
SiC MOSFET在功率损耗和温度特性方面比Si IGBT具有更优越的开关性能。为了显著提高中压驱动和大功率变换器的效率和功率密度。本文采用串联的SiC mosfet代替高压Si IGBT。具体来说，提出了一种具有良好的动态电压共享性和高可靠性的“串联SiC mosfet”标准块，改变了游戏规则，具有普遍适用性。该模块的核心技术是具有器件同步功能的电流源栅极驱动器。
Current Source Gate Driver for Series Connected Silicon-Carbide (SiC) MOSFETs
SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium voltage drive and high-power converters. In this paper, series connected SiC MOSFETs are used to replace the high voltage Si IGBT. Specifically, a game changing and universally applicable standard block of "series connected SiC MOSFETs" with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function.
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