射频MEMS开关的性能研究

H. T. Su, I. Llamas-Garro, M. Lancaster, M. Prest, Jaehyoung Park, Jung-Mu Kim, C. Baek, Yong-Kweon Kim
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引用次数: 1

摘要

研究了微机电系统(MEMS)金属开关在宽温度范围内的性能。使用低温探针站进行测量,使用频率高达20 GHz的网络分析仪进行s参数测量。总共评估了28个开关。调查显示,当温度降低到10 K时,驱动电压增加50%,操作开关的百分比减少。在室温下,最佳隔离(打开时)在10 GHz下为30 dB,插入损耗为0.14 dB(关闭时)。在低温下测量精度降低,但隔离和插入损耗与室温值相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigating the Performance of RF MEMS Switches
The performance of micro-electro-mechanical system (MEMS) metal switches were investigated at wide temperature range. Measurements were carried out using cryogenic probe station and S-parameters were taken using a network analyser for frequencies up to 20 GHz. A total of 28 switches were evaluated. The investigation shows a 50% increase in the actuation voltage and a decrease in the percentage of operational switches as the temperature was reduced to 10 K. At room temperature the best isolation (when open) was 30 dB at 10 GHz with an insertion loss of 0.14 dB (when closed). Measurement accuracy was reduced at low temperature, however, isolations and insertion losses were similar to room temperature values.
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