教程:表征dram

Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing Pub Date : 1999-08-09 DOI:10.1109/MTDT.1999.782685

J. Voilrath

{"title":"教程:表征dram","authors":"J. Voilrath","doi":"10.1109/MTDT.1999.782685","DOIUrl":null,"url":null,"abstract":"This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Tutorial: characterizing SDRAMs\",\"authors\":\"J. Voilrath\",\"doi\":\"10.1109/MTDT.1999.782685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文介绍了在制造环境下SDRAM的表征方法。显示了接触测试、直流测试、基本功能测试、信号裕度测试和保持特性。以微探针为例，对蜂窝信号进行测量。讨论了可用于辅助表征和失效分析(FA)的sdram特殊测试模式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Tutorial: characterizing SDRAMs

This paper presents characterization methods for an SDRAM in a manufacturing environment. Contact tests, dc tests, basic functional tests, signal margin tests and retention characterization are shown. Measurement of the cell signal is used as an example for pico probing. Special test modes for SDRAMs which can be used to aid characterization and failure analysis (FA) are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing

自引率

0.00%

发文量