Thin Layers Obtained by Plasma Process for Emerging Non-Volatile Memory (RRAM) Applications

In that work, we show that RF magnetron sputtering can be used to obtain pure and crystallized thin layers of GaV 4 S 8 films with a well controlled composition, depending mainly on RF power and deposition pressure. The obtained layers exhibit similar structural and physical properties as GaV 4 S 8 polycrystal or crystal. In addition, we have successfully demonstrated that a reversible resistive switching can also be obtained on thin layers. Electrical measurements will be further investigated on thinner layers and for shorter pulse time. Nevertheless, these preliminary results obtained on Au/Si substrates are very promising for further RRAM applications.