太赫兹应用中SiGe hbt的频率限制

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351830

Jiahui Yuan, R. Krithivasan, J. Cressler, M. Khater, D. Ahlgren, A. Joseph

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引用次数: 27

摘要

我们报告了硅基晶体管的fmax记录，以及硅-锗异质结双极晶体管(SiGe HBTs)的f1+ fmax第一组超过1太赫兹。在击穿电压BVCEO为1.62 V (300 K时为1.70)，击穿电压BVCEO为1.62 V (300 K时为1.70)的情况下，在4.5 K(卡盘温度)下，测量了0.12倍2.5 mm - sige HBT (343 / 309 GHz)下的峰值fmax为618 GHz，底层fmax为463 GHz，产生了创纪录的fT × BVCEO产品750 GHz-V (300 K时为510 GHz-V)。对这些器件在低温下的基输运的研究表明，非平衡效应是有效的。

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On the Frequency Limits of SiGe HBTs for TeraHertz Applications

We report record f_max for a silicon-based transistor, and the first combined set of f₁+ f_max above one-terahertz for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Peak f_max of 618 GHz and f_rfloor of 463 GHz at 4.5 K (chuck temperature) were measured for a scaled 0.12 times 2.5 mum-SiGe HBT (343 / 309 GHz at 300 K), at a breakdown voltage BV_CEO of 1.62 V (1.70 at 300 K), yielding a record f_T x BV_CEO product of 750 GHz-V (510 GHz-V at 300 K). An examination of base transport in these devices at low temperatures suggests non-equilibrium effects are operative.

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来源期刊

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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