二氧化硅薄膜中捕获电荷对低电平泄漏电流的影响

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982058

T.P. Chen, Y. Luo

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引用次数: 1

摘要

在这项工作中，设计了实验来研究捕获电荷对SiO/ sub2 /薄膜中SILC的影响。结果表明，在低场条件下，栅极/氧化物界面区捕获电子的释放可能是负差阻电流产生的原因。研究还表明，正电荷可以增强硅碳纳米管的直流分量。

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Influence of trapped charges on low-level leakage current in thin silicon dioxide films

In this work, experiments were designed to examine the influence of the trapped charges on SILC in thin SiO/sub 2/ films. It is shown that the release of the trapped electrons in the gate/oxide interface region during the I-V measurement could be responsible for the negative-differential-resistance current at low fields. It is also shown that the positive trapped charges could enhance the DC component of the SILC.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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