利用垂直GaN fin - jfet开关1400v 10mhz母线电压

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147526

A. Edwards, V. Padilla, C. Drowley, S. Pidaparthi, J. Michael, Prashant Saxena, Joseph S. Tandingan, W. Meier, Andrew Walker

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摘要

本文给出了1200v额定常关垂直GaN Fin-JFET的快速开关性能结果。提出了一个紧凑的SPICE模型来预测其直流和动态行为，并通过使用定制的双脉冲箝位电感开关(CIS)电路进行测量来验证预期的开关性能。据我们所知，这是设备切换1400 V允许10 MHz操作的第一份报告。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertical GaN Fin-JFETs

The fast-switching performance results of a 1200 V rated normally-off vertical GaN Fin-JFET are presented in this paper. A compact SPICE model which predicts its DC and dynamic behavior is presented and the anticipated switching performance is verified by measurement using a custom double pulse clamped inductive switching (CIS) circuit. As far as we know, this is the first report of a device switching 1400 V allowing for 10 MHz operation.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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