{"title":"用蒙特卡罗方法对双栅砷化镓场效应晶体管进行计算机模拟","authors":"C. Moglestue","doi":"10.1049/IJ-SSED:19790028","DOIUrl":null,"url":null,"abstract":"The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":" 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method\",\"authors\":\"C. Moglestue\",\"doi\":\"10.1049/IJ-SSED:19790028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\" 10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19790028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19790028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method
The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.
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