{"title":"用于双极电阻开关存储器的紧凑SPICE模型","authors":"Kaiwen Hsu, Wei-Wen Ding, M. Chiang","doi":"10.1109/EDSSC.2013.6628127","DOIUrl":null,"url":null,"abstract":"In this paper, we successfully develop a compact model for bipolar resistive switching memory using Verilog-A. Fundamental I-V characteristics of RRAM are physically and yet simply represented by this model. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A compact SPICE model for bipolar resistive switching memory\",\"authors\":\"Kaiwen Hsu, Wei-Wen Ding, M. Chiang\",\"doi\":\"10.1109/EDSSC.2013.6628127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we successfully develop a compact model for bipolar resistive switching memory using Verilog-A. Fundamental I-V characteristics of RRAM are physically and yet simply represented by this model. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A compact SPICE model for bipolar resistive switching memory
In this paper, we successfully develop a compact model for bipolar resistive switching memory using Verilog-A. Fundamental I-V characteristics of RRAM are physically and yet simply represented by this model. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used.