CVD TiN势垒沉积过程中AlCu回流到通孔中

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993702

A. Oliva, A. El-Sayed, A. Griffin, C. Montgomery

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引用次数: 3

摘要

本文分析了一种新的0.35 /spl mu/m工艺的Via失效机理。对失效过孔的失效分析显示，在过孔的底部有一个异常层。该层的电子衍射谱(EDS)证实其主要成分为AlCu和钛铝化物簇;氟也被检测到。这种失败的根本原因是在CVD TiN沉积之前的预热步骤中AlCu挤压到Via中。同时发现，提高Ti阻挡层的覆盖率可以减少Al挤压的发生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reflow of AlCu into Vias during CVD TiN barrier deposition

A novel Via failure mechanism for a 0.35 /spl mu/m technology is analyzed in this work. Failure analysis of the failed Vias reveal an anomalous layer at the bottom of the Via hole. Electron diffraction spectra (EDS) of this layer confirms that the main component is AlCu with clusters of titanium aluminide; fluorine is also detected. The root cause of this failure was AlCu extrusion into the Via during the preheat step prior to CVD TiN deposition. It was also found that an improved Ti barrier step coverage can reduce the occurrence of Al extrusions.

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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